
BAV23C-HE3-18 Vishay Semiconductors
Hersteller: Vishay Semiconductors
Small Signal Switching Diodes 250 Volt 200mA 50ns Dual Common Cathode
Small Signal Switching Diodes 250 Volt 200mA 50ns Dual Common Cathode
auf Bestellung 9632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 0.60 EUR |
10+ | 0.42 EUR |
100+ | 0.20 EUR |
1000+ | 0.12 EUR |
2500+ | 0.10 EUR |
10000+ | 0.08 EUR |
20000+ | 0.07 EUR |
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Technische Details BAV23C-HE3-18 Vishay Semiconductors
Description: DIODE ARR GP 200V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200mA (DC), Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAV23C-HE3-18
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BAV23C-HE3-18 | Hersteller : Vishay |
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BAV23C-HE3-18 | Hersteller : Vishay |
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BAV23C-HE3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR GP 200V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |