BAV300-TR3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 8+ | 0.36 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 2500+ | 0.063 EUR |
| 5000+ | 0.055 EUR |
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Technische Details BAV300-TR3 Vishay Semiconductors
Description: DIODE GP 50V 250MA MICROMELF, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: MicroMELF, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, No Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAV300-TR3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
BAV300-TR3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 50V 250MA MICROMELFQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAV300-TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 50V 250MA MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: DIODE GP 50V 250MA MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH