BAV70E6767 Infineon Technologies


INFNS11270-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DIODE ARRAY GEN PURP 80V 200MA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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Technische Details BAV70E6767 Infineon Technologies

Description: DIODE ARRAY GEN PURP 80V 200MA, Current - Reverse Leakage @ Vr: 150 nA @ 70 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 150°C, Current - Average Rectified (Io) (per Diode): 200mA (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.