BAV70QAZ Nexperia
auf Bestellung 18990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5715+ | 0.026 EUR |
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Technische Details BAV70QAZ Nexperia
Description: DIODE ARRAY GP 100V DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 175mA (DC), Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAV70QAZ nach Preis ab 0.02 EUR bis 1.46 EUR
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BAV70QAZ | Hersteller : Nexperia |
 Diode Switching 100V 0.3A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 7358 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Diode Switching 100V 0.3A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 7358 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Diode Switching 100V 0.3A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 205000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 300mA; 4ns; DFN1010D-3; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: DFN1010D-3 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.54W Kind of package: reel; tape Application: automotive industry Max. load current: 1A Features of semiconductor devices: fast switching Anzahl je Verpackung: 10 Stücke |
auf Bestellung 3480 Stücke: Lieferzeit 7-14 Tag (e) |
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BAV70QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 300mA; 4ns; DFN1010D-3; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: DFN1010D-3 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.54W Kind of package: reel; tape Application: automotive industry Max. load current: 1A Features of semiconductor devices: fast switching |
auf Bestellung 3480 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 175mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3834 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Small Signal Switching Diodes Dual common cathode high-speed switching diode |
auf Bestellung 4570 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Diode Switching 100V 0.3A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 18990 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAV70QAZ | Hersteller : NXP Semiconductors |
Diode Switching 100V 0.3A Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 189350 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Diode Switching 100V 0.3A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAV70QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 175mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |