BAV70QAZ NEXPERIA
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 300mA; 4ns; DFN1010D-3; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: DFN1010D-3
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.54W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Features of semiconductor devices: fast switching
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 834+ | 0.086 EUR |
| 915+ | 0.078 EUR |
| 989+ | 0.072 EUR |
| 1036+ | 0.069 EUR |
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Technische Details BAV70QAZ NEXPERIA
Description: DIODE ARRAY GP 100V DFN1010D-3, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1010D-3, Current - Average Rectified (Io) (per Diode): 175mA (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAV70QAZ nach Preis ab 0.07 EUR bis 0.5 EUR
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BAV70QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V DFN1010D-3 Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1010D-3 Current - Average Rectified (Io) (per Diode): 175mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 3334 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia |
Small Signal Switching Diodes DIODE-SS 100V 300MA |
auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAV70QAZ | Hersteller : NXP Semiconductors |
Diode Switching 100V 0.3A Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 124350 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V DFN1010D-3 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1010D-3 Current - Average Rectified (Io) (per Diode): 175mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
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