BAW56QA147 NXP
Hersteller: NXPDescription: NXP - BAW56QA147 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 235000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BAW56QA147 NXP
Description: DIODE, Packaging: Bulk, Part Status: Active, Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 310mA (DC), Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAW56QA147
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Verfügbarkeit |
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BAW56QA147 | Hersteller : NXP USA Inc. |
Description: DIODE Packaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 310mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
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