BAW56SRAZ NXP Semiconductors

Description: DIODE ARR GP 90V 375MA DFN1412-6, Packaging: Bulk, Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 2 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 375mA (DC), Supplier Device Package: DFN1412-6, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Qualification: AEC-Q101.