BBS3002-DL-1E ON Semiconductor

Description: MOSFET P-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V, Power Dissipation (Max): 90W (Tc), Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V.