Technische Details BBS3002-TL-1E ON Semiconductor
Description: MOSFET P-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V, Power Dissipation (Max): 90W (Tc), Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V.
Weitere Produktangebote BBS3002-TL-1E
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BBS3002 Produktcode: 150279 |
Transistoren > Transistoren P-Kanal-Feld |
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| BBS3002 | Hersteller : onsemi | onsemi PCH 100A 60V 4V DRIVE TO2 |
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BBS3002-TL-1E | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BBS3002-TL-1E | Hersteller : onsemi |
Description: MOSFET P-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Power Dissipation (Max): 90W (Tc) Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V |
Produkt ist nicht verfügbar |