BC817K-25WH6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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Technische Details BC817K-25WH6327 Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: PG-SOT323-3-1, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.
Weitere Produktangebote BC817K-25WH6327 nach Preis ab 0.12 EUR bis 0.71 EUR
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BC 817K-25W H6327 | Infineon Technologies | Bipolar Transistors - BJT AF TRANSISTOR |
auf Bestellung 6915 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC 817K-25W H6327 |
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTOR
Bipolar Transistors - BJT AF TRANSISTOR
auf Bestellung 6915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.12 EUR |