Produkte > ONSEMI > BC237BZL1G
BC237BZL1G

BC237BZL1G onsemi


BC237%28B%2C%20C%29%2C%20239C.pdf
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BC237BZL1G onsemi

Description: TRANS NPN 45V 0.1A TO92, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Packaging: Tape & Box (TB).

Weitere Produktangebote BC237BZL1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BC237BZL1G BC237BZL1G ON Semiconductor BC237_D-2310027.pdf Bipolar Transistors - BJT 100mA 50V NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC237BZL1G BC237_D-2310027.pdf
BC237BZL1G
Hersteller: ON Semiconductor
Bipolar Transistors - BJT 100mA 50V NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH