BC307BZL1G ON Semiconductor
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6834+ | 0.08 EUR |
| 10000+ | 0.069 EUR |
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Technische Details BC307BZL1G ON Semiconductor
Description: TRANS PNP 45V 0.1A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 280MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 350 mW.
Weitere Produktangebote BC307BZL1G nach Preis ab 0.081 EUR bis 0.081 EUR
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BC307BZL1G | Hersteller : onsemi |
 Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC307BZL1G | Hersteller : ONSEMI |
Description: ONSEMI - BC307BZL1G - BC307BZL1G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC307BZL1G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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BC307BZL1G | Hersteller : onsemi |
Description: TRANS PNP 45V 0.1A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |