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BC51PAS-QX

BC51PAS-QX Nexperia

BC51XPAS-Q_SER.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT BC51PAS-Q/SOT1061/HU SON3
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10+0.83 EUR
100+0.52 EUR
500+0.5 EUR
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Technische Details BC51PAS-QX Nexperia

Description: BC51PAS-Q/SOT1061/HUSON3, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 145MHz, Supplier Device Package: 3-HUSON (2x2), Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 420 mW, Qualification: AEC-Q101.

Weitere Produktangebote BC51PAS-QX

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BC51PAS-QX BC51PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC51PAS-QX BC51PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC51PAS-QX BC51XPAS-Q_SER.pdf
BC51PAS-QX
Hersteller: Nexperia USA Inc.
Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC51PAS-QX BC51XPAS-Q_SER.pdf
BC51PAS-QX
Hersteller: Nexperia USA Inc.
Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH