BC52-10PA,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 420 mW
Qualification: AEC-Q100
Grade: Automotive
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Technische Details BC52-10PA,115 Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: 3-HUSON (2x2), Frequency - Transition: 145MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-PowerUDFN, Packaging: Tape & Reel (TR), Power - Max: 420 mW, Qualification: AEC-Q100, Grade: Automotive.
Weitere Produktangebote BC52-10PA,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BC52-10PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A 3HUSON Frequency - Transition: 145MHz Power - Max: 420 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: 3-HUSON (2x2) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-PowerUDFN Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BC52-10PA,115 | Nexperia |
Bipolar Transistors - BJT 60 V, 1 A PNP medium power transistors |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC52-10PA,115 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Frequency - Transition: 145MHz
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-HUSON (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS PNP 60V 1A 3HUSON
Frequency - Transition: 145MHz
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-HUSON (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC52-10PA,115 |
|
Hersteller: Nexperia
Bipolar Transistors - BJT 60 V, 1 A PNP medium power transistors
Bipolar Transistors - BJT 60 V, 1 A PNP medium power transistors
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH