Technische Details BC546BTF ON Semiconductor
Description: TRANS NPN 65V 0.1A TO-92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 500 mW.
Weitere Produktangebote BC546BTF nach Preis ab 0.043 EUR bis 0.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BC546BTF | ON Semiconductor |
 Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R |
auf Bestellung 25604 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTF | onsemi |
Description: TRANS NPN 65V 0.1A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC546BTF | ON Semiconductor |
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTF | ON Semiconductor |
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R |
auf Bestellung 18249 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTF | onsemi |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 40904 Stücke: Lieferzeit 10-14 Tag (e) |
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BC546BTF | onsemi |
Description: TRANS NPN 65V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
auf Bestellung 5892 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC546BTF |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
auf Bestellung 25604 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8646+ | 0.075 EUR |
| 10000+ | 0.067 EUR |
| BC546BTF |
|
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.11 EUR |
| 4000+ | 0.094 EUR |
| BC546BTF |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| BC546BTF |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
auf Bestellung 18249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 962+ | 0.18 EUR |
| 1553+ | 0.11 EUR |
| 2545+ | 0.063 EUR |
| 3379+ | 0.046 EUR |
| 3485+ | 0.043 EUR |
| BC546BTF |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 334+ | 0.25 EUR |
| 388+ | 0.21 EUR |
| 557+ | 0.15 EUR |
| 652+ | 0.13 EUR |
| 762+ | 0.11 EUR |
| 925+ | 0.092 EUR |
| BC546BTF |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 40904 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 11+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |
| 4000+ | 0.092 EUR |
| BC546BTF |
|
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
auf Bestellung 5892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 68+ | 0.31 EUR |
| 108+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |