BC637RL1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 5455+ | 0.099 EUR |
| 10000+ | 0.087 EUR |
| 100000+ | 0.072 EUR |
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Technische Details BC637RL1G ON Semiconductor
Description: TRANS NPN 60V 1A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 625 mW.
Weitere Produktangebote BC637RL1G nach Preis ab 0.072 EUR bis 0.12 EUR
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BC637RL1G | ON Semiconductor |
 Trans GP BJT NPN 60V 1A 625mW 3-Pin TO-92 T/R Automotive AEC-Q101 |
auf Bestellung 173000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC637RL1G | onsemi |
Description: TRANS NPN 60V 1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 320102 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BC637RL1G |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 1A 625mW 3-Pin TO-92 T/R Automotive AEC-Q101
Trans GP BJT NPN 60V 1A 625mW 3-Pin TO-92 T/R Automotive AEC-Q101
auf Bestellung 173000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5455+ | 0.099 EUR |
| 10000+ | 0.087 EUR |
| 100000+ | 0.072 EUR |
| BC637RL1G |
|
Hersteller: onsemi
Description: TRANS NPN 60V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS NPN 60V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 320102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3620+ | 0.12 EUR |