BC63916-D74Z ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.18 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2000 Stücke
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Technische Details BC63916-D74Z ON Semiconductor
Description: TRANS NPN 80V 1A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W.
Weitere Produktangebote BC63916-D74Z nach Preis ab 0.18 EUR bis 0.96 EUR
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BC63916-D74Z | ON Semiconductor |
 Trans GP BJT NPN 80V 1A 1000mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC63916-D74Z | onsemi |
Description: TRANS NPN 80V 1A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC63916-D74Z | onsemi |
Bipolar Transistors - BJT TO-92 NPN GP AMP |
auf Bestellung 4705 Stücke: Lieferzeit 10-14 Tag (e) |
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BC63916-D74Z | onsemi |
Description: TRANS NPN 80V 1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
auf Bestellung 714 Stücke: Lieferzeit 10-14 Tag (e) |
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BC63916-D74Z | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 0.83W; TO92 Formed Mounting: THT Collector-emitter voltage: 80V Power dissipation: 0.83W Polarisation: bipolar Type of transistor: NPN Current gain: 100...250 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 100MHz Collector current: 1A |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BC63916-D74Z |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 80V 1A 1000mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 80V 1A 1000mW 3-Pin TO-92 Fan-Fold
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.18 EUR |
| BC63916-D74Z |
|
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.23 EUR |
| BC63916-D74Z |
|
Hersteller: onsemi
Bipolar Transistors - BJT TO-92 NPN GP AMP
Bipolar Transistors - BJT TO-92 NPN GP AMP
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.21 EUR |
| 4000+ | 0.2 EUR |
| BC63916-D74Z |
|
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 36+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| BC63916-D74Z |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 0.83W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 0.83W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 100...250
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 100MHz
Collector current: 1A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 0.83W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 0.83W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 100...250
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 100MHz
Collector current: 1A
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)