BC807-25/6235 NXP
Hersteller: NXP
Description: NXP - BC807-25/6235 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BC807-25/6235 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: TO-236AB, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Part Status: Active, Packaging: Bulk.
Weitere Produktangebote BC807-25/6235
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC807-25/6235 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Qualification: AEC-Q101 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: TO-236AB Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC807-25/6235 |
|
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Active
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH