BC807-QR NEXPERIA
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 345mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 345mW
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Application: automotive industry
| Anzahl | Preis |
|---|---|
| 650+ | 0.11 EUR |
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Technische Details BC807-QR NEXPERIA
Description: TRANS PNP 45V 0.5A TO-236AB, Qualification: AEC-Q101, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: TO-236AB, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BC807-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BC807-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.5A TO-236AB Qualification: AEC-Q101 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: TO-236AB Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BC807-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT PNP/PNP general purpose double transistor |
Produkt ist nicht verfügbar |