BC808-40E6327 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BC808-40E6327 - BC808 BIPOLAR GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details BC808-40E6327 ROCHESTER ELECTRONICS
Description: TRANS PNP 25V 0.5A PG-SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: PG-SOT23, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 330 mW.
Weitere Produktangebote BC808-40E6327
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BC808-40E6327 | Hersteller : Infineon Technologies |
Trans GP BJT PNP 25V 0.5A 330mW Automotive 3-Pin SOT-23 T/R |
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| BC808-40E6327 | Hersteller : Infineon Technologies |
Description: TRANS PNP 25V 0.5A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC 808-40 E6327 | Hersteller : Infineon Technologies |
Description: TRANS PNP 25V 0.5A PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC 808-40 E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
Produkt ist nicht verfügbar |