BC816-25H-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: BC816-25H-Q/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 0.7 EUR |
| 54+ | 0.48 EUR |
| 111+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
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Technische Details BC816-25H-QR Nexperia USA Inc.
Description: BC816-25H-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 300 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC816-25H-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC816-25H-QR | Hersteller : Nexperia USA Inc. |
Description: BC816-25H-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 300 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BC816-25H-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT BC816-25H-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |