BC817-16QB-QZ Nexperia
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5301+ | 0.1 EUR |
| 10000+ | 0.089 EUR |
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Technische Details BC817-16QB-QZ Nexperia
Description: TRANS NPN 45V 0.5A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 350 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC817-16QB-QZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC817-16QB-QZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS NPN 45V 0.5A DFN1110D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BC817-16QB-QZ | Hersteller : Nexperia |
Bipolar Transistors - BJT SOT8015 45V .5A NPN GP TRANS |
Produkt ist nicht verfügbar |