Produkte > DIODES INCORPORATED > BC817-25Q-7-F-52
BC817-25Q-7-F-52

BC817-25Q-7-F-52 Diodes Incorporated

BC817-16Q_25Q_40Q.pdf
Hersteller: Diodes Incorporated
Description: General Purpose Transistor SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BC817-25Q-7-F-52 Diodes Incorporated

Description: General Purpose Transistor SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 310 mW.