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BC817-25QC-QZ

BC817-25QC-QZ Nexperia


BC817QC_Q_SER-2498358.pdf Hersteller: Nexperia
Bipolar Transistors - BJT BC817-25QC-Q/SOT8009/DFN1412D-
auf Bestellung 2518 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
109+ 0.48 EUR
171+ 0.3 EUR
1000+ 0.14 EUR
5000+ 0.12 EUR
10000+ 0.091 EUR
25000+ 0.086 EUR
Mindestbestellmenge: 75
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Technische Details BC817-25QC-QZ Nexperia

Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1412D-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 380 mW, Grade: Automotive, Qualification: AEC-Q101.

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BC817-25QC-QZ BC817-25QC-QZ Hersteller : Nexperia bc817qc-q_ser.pdf Trans GP BJT NPN 45V 0.5A 480mW Automotive AEC-Q101 3-Pin DFN-D T/R
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BC817-25QC-QZ BC817-25QC-QZ Hersteller : Nexperia USA Inc. BC817QC-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 380 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar