BC817-40FHW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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Technische Details BC817-40FHW-7 Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: U-DFN1110-3 (SWP) (Type A), Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 460 mW.
Weitere Produktangebote BC817-40FHW-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BC817-40FHW-7 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT General Purpose Transistor U-DFN1110A-3/SWP T&R 5K |
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