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BC817K-40WE6327 ROCHESTER ELECTRONICS

INFNS16504-1.pdf?t.download=true&u=5oefqw
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BC817K-40WE6327 - BC817 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BC817K-40WE6327 ROCHESTER ELECTRONICS

Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 170MHz, Supplier Device Package: PG-SOT323-3-1, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 500 mW.

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BC817K40WE6327 BC817K40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-40WE6327 BC817K-40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC 817K-40W E6327 BC 817K-40W E6327 Infineon Technologies bc817Kseries_bc818Kseries-85224.pdf Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC 817K-40W E6327 bc817Kseries_bc818Kseries-85224.pdf
BC 817K-40W E6327
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH