Technische Details BC818K-40E6327 Infineon
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 170MHz, Supplier Device Package: PG-SOT23, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 500 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC818K-40E6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BC818K-40E6327 | Infineon Technologies |
 Description: BIPOLAR GEN PURPOSE TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6951 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BC 818K-40 E6327 | Infineon Technologies |
Bipolar Transistors - BJT AF TRANS GP BJT NPN 25V 0.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC818K-40E6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6951 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC 818K-40 E6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANS GP BJT NPN 25V 0.5A
Bipolar Transistors - BJT AF TRANS GP BJT NPN 25V 0.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH