auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10527+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC846AQCZ Nexperia
Description: TRANS 65V 0.1A DFN1412D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1412D-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 360 mW.
Weitere Produktangebote BC846AQCZ nach Preis ab 0.05 EUR bis 0.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BC846AQCZ | Hersteller : Nexperia |
 Trans GP BJT NPN 65V 0.1A 450mW 3-Pin DFN-D T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
BC846AQCZ | Hersteller : Nexperia |
Bipolar Transistors - BJT BC846AQC/SOT8009/DFN1412D-3 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
BC846AQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS 65V 0.1A DFN1412D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
|||||||||||
|
|
BC846AQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS 65V 0.1A DFN1412D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |