BC846BQB-QZ Nexperia
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6579+ | 0.082 EUR |
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Technische Details BC846BQB-QZ Nexperia
Description: TRANS NPN 65V 0.1A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BC846BQB-QZ nach Preis ab 0.14 EUR bis 0.44 EUR
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BC846BQB-QZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS NPN 65V 0.1A DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 340 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4331 Stücke: Lieferzeit 10-14 Tag (e) |
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BC846BQB-QZ | Hersteller : Nexperia |
Bipolar Transistors - BJT SOT8015 65V .5A NPN GP TRANS |
auf Bestellung 4845 Stücke: Lieferzeit 10-14 Tag (e) |
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BC846BQB-QZ | Hersteller : Nexperia |
Trans GP BJT NPN 65V 0.1A 420mW Automotive AEC-Q101 3-Pin DFN-D T/R |
Produkt ist nicht verfügbar |
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BC846BQB-QZ | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 65V 0.1A DFN1110D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 340 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |