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BC847BFN3_R1_00001

BC847BFN3_R1_00001 Panjit International Inc.

BC847BFN3.pdf Hersteller: Panjit International Inc.
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 4907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 42
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Technische Details BC847BFN3_R1_00001 Panjit International Inc.

Description: TRANS NPN 45V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 3-DFN (0.6x1), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW.

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BC847BFN3_R1_00001 BC847BFN3_R1_00001 Hersteller : Panjit BC847BFN3-1869885.pdf Bipolar Transistors - BJT NPNGENERALPURPOSETRANSISTORS VCE45V IC100mA DFN3L
auf Bestellung 15985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.43 EUR
10+ 0.29 EUR
100+ 0.19 EUR
1000+ 0.083 EUR
2500+ 0.074 EUR
8000+ 0.055 EUR
24000+ 0.053 EUR
Mindestbestellmenge: 7
BC847BFN3_R1_00001 BC847BFN3_R1_00001 Hersteller : Panjit International Inc. BC847BFN3.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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