BC847CDXV6T1H onsemi
Hersteller: onsemi
Description: TRANS 2NPN 45V 0.1A SOT563-6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Description: TRANS 2NPN 45V 0.1A SOT563-6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6918+ | 0.096 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC847CDXV6T1H onsemi
Description: TRANS 2NPN 45V 0.1A SOT563-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-563.
Weitere Produktangebote BC847CDXV6T1H nach Preis ab 0.3 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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| BC847CDXV6T1H | Hersteller : onsemi | Bipolar Transistors - BJT SS SOT563 GP XSTR NP |
auf Bestellung 2000 Stücke: Lieferzeit 201-215 Tag (e) |
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| BC847CDXV6T1H | Hersteller : ONSEMI |
 Description: ONSEMI - BC847CDXV6T1H - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC847CDXV6T1H | Hersteller : ON Semiconductor |
Bipolar Transistors - BJT SS SOT563 GP XSTR NP |
Produkt ist nicht verfügbar |
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BC847CDXV6T1H | Hersteller : onsemi |
Description: TRANS 2NPN 45V 0.1A SOT563-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |