BC847CQB-QZ Nexperia
| Anzahl | Preis |
|---|---|
| 5894+ | 0.092 EUR |
| 10000+ | 0.079 EUR |
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Technische Details BC847CQB-QZ Nexperia
Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Transistor Type: NPN, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1110D-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ).
Weitere Produktangebote BC847CQB-QZ nach Preis ab 0.09 EUR bis 0.45 EUR
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BC847CQB-QZ | Hersteller : Nexperia |
 Bipolar Transistors - BJT SOT8015 45V .1A NPN GP TRANS |
auf Bestellung 3295 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847CQB-QZ | Hersteller : Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACK Transistor Type: NPN Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: DFN1110D-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) |
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