| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.54 EUR |
| 11+ | 0.32 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.11 EUR |
| 5000+ | 0.075 EUR |
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Technische Details BC847CQB-QZ Nexperia
Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Transistor Type: NPN, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1110D-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ).
Weitere Produktangebote BC847CQB-QZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC847CQB-QZ | Nexperia USA Inc. |
 Description: SMALL SIGNAL BIPOLAR IN DFN PACKTransistor Type: NPN Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: DFN1110D-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC847CQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1110D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1110D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH