BC848CPDW1T1G ON Semiconductor
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3691+ | 0.042 EUR |
| 6000+ | 0.04 EUR |
| 9000+ | 0.026 EUR |
| 24000+ | 0.025 EUR |
Produktrezensionen
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Technische Details BC848CPDW1T1G ON Semiconductor
Description: TRANS NPN/PNP 30V 0.1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote BC848CPDW1T1G nach Preis ab 0.024 EUR bis 0.51 EUR
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BC848CPDW1T1G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN/PNP 30V 0.1A 380mW 6-Pin SC-88 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848CPDW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP 30V 0.1A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) |
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BC848CPDW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP 30V 0.1A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 80962 Stücke: Lieferzeit 21-28 Tag (e) |
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BC848CPDW1T1G | Hersteller : onsemi |
Bipolar Transistors - BJT 100mA 30V Dual Complementary |
auf Bestellung 1276 Stücke: Lieferzeit 14-28 Tag (e) |
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BC848CPDW1T1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN/PNP 30V 0.1A 380mW 6-Pin SC-88 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848CPDW1T1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN/PNP 30V 0.1A 380mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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BC848CPDW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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BC848CPDW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |