BC848W/DG/B2115 NXP
Hersteller: NXP
Description: NXP - BC848W/DG/B2115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BC848W/DG/B2115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: SC-70, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.
Weitere Produktangebote BC848W/DG/B2115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC848W/DG/B2115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Qualification: AEC-Q101 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SC-70 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC848W/DG/B2115 |
|
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH