BC850B

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 45V 250MW 200@2MA,5V 100MA NPN S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 45V 0.1A 250mW 3-Pin SOT-23 T/R

Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A

Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, SOT-23, 45V, 100mA, NPN

Hersteller: Diotec Semiconductor
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 45V 250MW 200@2MA,5V 100MA NPN S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW

Hersteller: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - BC850B - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 100 mA, 200 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Verlustleistung: 200mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 45V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C

Hersteller: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - BC850B - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 100 mA, 200 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99

Hersteller: NXP
(NPN,45V,1A,2W,SOT-23) Транзистори

NPN 45V, 0.1A, general purpose transistor SOT-23-3

Hersteller: KEC
Транзистор NPN, Ptot, Вт = 0,35, Uceo, В = 45, Ic = 100 мА, Тип монт. = smd, ft, МГц = 300, hFE = 200 @ 2 А, 5 В, Icutoff-max = 15 нА, Uceo(sat), В @ Ic, Ib = 0,2 @ 5 мA, 100 мA, Тексп, °С = -55...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke

Hersteller: Diotec Semiconductor
Транзистор NPN, Ptot, Вт = 0,25, Uceo, В = 45, Ic = 100 мА, Тип монт. = smd, ft, МГц = 100, hFE = 200/450 @ 2 мA, 5 В, Icutoff-max = 15 нА, Тексп, °С = -55...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke