BC856AE6327 Infineon Technologies
Hersteller: Infineon Technologies
Trans GP BJT PNP 65V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details BC856AE6327 Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT23-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 330 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BC856AE6327 nach Preis ab 0.036 EUR bis 0.045 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
|
BC856AE6327 | Infineon Technologies |
Trans GP BJT PNP 65V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||
|
BC856A-E6327 | Infineon Technologies |
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
|
BC856AE6327 | Infineon Technologies |
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 39045 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
| BC856A-E6327 |
|
auf Bestellung 8457 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| BC856AE6327 |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BC856AE6327 |
![]() |
Hersteller: Infineon Technologies
Trans GP BJT PNP 65V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans GP BJT PNP 65V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15152+ | 0.036 EUR |
| BC856A-E6327 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8955+ | 0.045 EUR |
| BC856AE6327 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8955+ | 0.045 EUR |
| BC856A-E6327 |
![]() |
auf Bestellung 8457 Stücke:
Lieferzeit 21-28 Tag (e)
| BC856AE6327 |
![]() |
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)


