BC856BMBYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |
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Technische Details BC856BMBYL Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1006B-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC856BMBYL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
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BC856BMBYL | Nexperia USA Inc. |
Description: TRANS PNP 60V 0.1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BC856BMBYL | Nexperia |
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC856BMBYL |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC856BMBYL |
|
Hersteller: Nexperia
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen
Stück im Wert von UAH