BC856BQB-QZ Nexperia
| Anzahl | Privatkunde |
|---|---|
| 5894+ | 0.11 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
5894 Stücke
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Technische Details BC856BQB-QZ Nexperia
Description: TRANS PNP 65V 0.1A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC856BQB-QZ nach Preis ab 0.09 EUR bis 0.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BC856BQB-QZ | Nexperia USA Inc. |
 Description: TRANS PNP 65V 0.1A DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 340 mW Qualification: AEC-Q101 |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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BC856BQB-QZ | Nexperia |
Bipolar Transistors - BJT BC856BQB-Q/SOT8015/DFN1110D-3 |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BC856BQB-QZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 78+ | 0.27 EUR |
| 125+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.095 EUR |
| BC856BQB-QZ |
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Hersteller: Nexperia
Bipolar Transistors - BJT BC856BQB-Q/SOT8015/DFN1110D-3
Bipolar Transistors - BJT BC856BQB-Q/SOT8015/DFN1110D-3
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.11 EUR |
| 5000+ | 0.09 EUR |