BC856BS/DG/B3115 NXP
Hersteller: NXP
Description: NXP - BC856BS/DG/B3115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BC856BS/DG/B3115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 6-TSSOP, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363.
Weitere Produktangebote BC856BS/DG/B3115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC856BS/DG/B3115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Part Status: Active Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 6-TSSOP Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC856BS/DG/B3115 |
|
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH