BC857BLP4-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.24 EUR |
| 5000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC857BLP4-7B Diodes Incorporated
Description: TRANS PNP 45V 0.1A X2-DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW.
Weitere Produktangebote BC857BLP4-7B nach Preis ab 0.18 EUR bis 1.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BC857BLP4-7B | Diodes Incorporated |
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K |
auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BC857BLP4-7B | Diodes Incorporated |
Description: TRANS PNP 45V 0.1A X2-DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X2-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BC857BLP4-7B | Diodes Zetex |
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R |
auf Bestellung 1699 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1699 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BC857BLP4-7B | Diodes Zetex |
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R |
auf Bestellung 1699 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1699 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC857BLP4-7B |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
| 10000+ | 0.18 EUR |
| BC857BLP4-7B |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| BC857BLP4-7B |
|
Hersteller: Diodes Zetex
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R
auf Bestellung 1699 Stücke:
Lieferzeit 14-21 Tag (e)
| BC857BLP4-7B |
|
Hersteller: Diodes Zetex
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R
auf Bestellung 1699 Stücke:
Lieferzeit 14-21 Tag (e)