BC857CQA147 NXP
Hersteller: NXP
Description: NXP - BC857CQA147 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BC857CQA147 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Power - Max: 280 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: DFN1010D-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad.
Weitere Produktangebote BC857CQA147
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC857CQA147 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Part Status: Active Packaging: Bulk Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: DFN1010D-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC857CQA147 |
|
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1010D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1010D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH