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BC857RAZ

BC857RAZ Nexperia

BC857RA.pdf Hersteller: Nexperia
Bipolar Transistors - BJT 65 V, 100 mA PNP general-purpose transistors
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.5 EUR
10+0.31 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
2500+0.1 EUR
5000+0.09 EUR
Mindestbestellmenge: 6
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Technische Details BC857RAZ Nexperia

Description: TRANS 2PNP 45V 100MA DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 325mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1412-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BC857RAZ nach Preis ab 0.13 EUR bis 0.51 EUR

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BC857RAZ BC857RAZ Hersteller : Nexperia USA Inc. BC857RA.pdf Description: TRANS 2PNP 45V 100MA DFN1412-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 325mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BC857RAZ BC857RAZ Hersteller : Nexperia USA Inc. BC857RA.pdf Description: TRANS 2PNP 45V 100MA DFN1412-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 325mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH