BC858B-7-F Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 30V 0.1A SOT-23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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Technische Details BC858B-7-F Diodes Incorporated
Description: TRANS PNP 30V 0.1A SOT-23-3, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BC858B-7-F nach Preis ab 0.056 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BC858B-7-F | Diodes Incorporated |
Bipolar Transistors - BJT PNP BIPOLAR |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC858B-7-F |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT PNP BIPOLAR
Bipolar Transistors - BJT PNP BIPOLAR
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.36 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.09 EUR |
| 1000+ | 0.079 EUR |
| 3000+ | 0.056 EUR |

