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BC858B-QVL Nexperia


BC856-Q_BC857-Q_BC858-Q.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 65V .1A PNP BJT
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Lieferzeit 10-14 Tag (e)
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15+0.2 EUR
27+0.11 EUR
100+0.067 EUR
500+0.048 EUR
1000+0.042 EUR
2500+0.037 EUR
5000+0.032 EUR
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Technische Details BC858B-QVL Nexperia

Description: TRANS PNP 30V 0.1A TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote BC858B-QVL

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BC858B-QVL BC858B-QVL Nexperia USA Inc. BC856-Q_BC857-Q_BC858-Q.pdf Description: TRANS PNP 30V 0.1A TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 70000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC858B-QVL BC858B-QVL NEXPERIA BC856-Q_BC857-Q_BC858-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Application: automotive industry
Current gain: 220...475
Kind of package: 11 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858B-QVL BC856-Q_BC857-Q_BC858-Q.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 0.1A TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 70000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC858B-QVL BC856-Q_BC857-Q_BC858-Q.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Application: automotive industry
Current gain: 220...475
Kind of package: 11 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH