Technische Details BC859CMTF FSC
Description: TRANS PNP 30V 0.1A SOT-23-3, Power - Max: 310 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BC859CMTF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BC859-C-MTF | Hersteller : SAMSUNG | SOT23 |
auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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BC859CMTF | Hersteller : onsemi |
 Description: TRANS PNP 30V 0.1A SOT-23-3Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |