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BC859C SHIKUES


TBC859c_SHK_SHIKUES_0001.pdf
Hersteller: SHIKUES
Transistor PNP; 800; 310mW; 30V; 100mA; 150MHz; -65°C ~ 150°C; Equivalent: BC859C,215; BC859C,235; BC859CLT1G; BC859CE6327HTSA1; BC859C SHIKUES TBC859c SHK
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPreis
1000+0.034 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BC859C SHIKUES

Description: TRANS PNP 30V 0.1A SOT23-3, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.

Weitere Produktangebote BC859C nach Preis ab 0.034 EUR bis 0.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BC859C BC859C Diotec Semiconductor bc856.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.034 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859-C BC859-C Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 26800 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.034 EUR
Mindestbestellmenge: 13172 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859C BC859C DIOTEC SEMICONDUCTOR bc856.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.1A
Collector-emitter voltage: 30V
Current gain: 520
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859C BC859C Diotec Semiconductor bc856.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 4007 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
164+0.11 EUR
269+0.066 EUR
500+0.047 EUR
1000+0.041 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859C bc856.pdf
Hersteller: Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.034 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859-C INFNS16508-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 26800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13172+0.034 EUR
Mindestbestellmenge: 13172 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859C bc856.pdf
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.1A
Collector-emitter voltage: 30V
Current gain: 520
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
455+0.16 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC859C bc856.pdf
Hersteller: Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 4007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
100+0.18 EUR
164+0.11 EUR
269+0.066 EUR
500+0.047 EUR
1000+0.041 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH