BC859A Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Technische Details BC859A Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BC859A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC859A | Hersteller : Diotec Semiconductor |
Bipolar Transistors - BJT BJT, SOT-23, 30V, 100mA, PNP |
Produkt ist nicht verfügbar |