BC859B-AQ Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 17+ | 0.17 EUR |
| 23+ | 0.12 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.072 EUR |
| 3000+ | 0.023 EUR |
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Technische Details BC859B-AQ Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3, Qualification: AEC-Q101, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BC859B-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC859B-AQ | Hersteller : Diotec Semiconductor |
 Description: TRANS PNP 30V 0.1A SOT23-3Qualification: AEC-Q101 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
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