Produkte > NEXPERIA USA INC. > BC859BW,115
BC859BW,115

BC859BW,115 Nexperia USA Inc.


BC859W_860W.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 0.1A SOT-323
Qualification: AEC-Q101
Grade: Automotive
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BC859BW,115 Nexperia USA Inc.

Description: TRANS PNP 30V 0.1A SOT-323, Qualification: AEC-Q101, Grade: Automotive, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-323, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO).

Weitere Produktangebote BC859BW,115

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BC859BW,115 BC859BW,115 Hersteller : Nexperia BC859W_860W.pdf Bipolar Transistors - BJT PNP general purpose transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH