Technische Details BC859-C-MTF SAMSUNG
Description: TRANS PNP 30V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 310 mW.
Weitere Produktangebote BC859-C-MTF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BC859CMTF | Hersteller : FSC |
 SOT-23 08+ |
auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) |
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BC859CMTF | Hersteller : ON Semiconductor |
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BC859CMTF | Hersteller : onsemi |
Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
Produkt ist nicht verfügbar |