BCM846SH6327 Infineon
Hersteller: Infineon
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 250MHz 250mW BCM846SH6327XTSA1 BCM846SH6327 BCM846S TBCM846s
Anzahl je Verpackung: 100 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.28 EUR |
Produktrezensionen
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Technische Details BCM846SH6327 Infineon
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk.
Weitere Produktangebote BCM846SH6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BCM846SH6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Part Status: Active Supplier Device Package: PG-SOT363-6-1 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BCM 846S H6327 | Infineon Technologies |
Bipolar Transistors - BJT AF TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCM846SH6327 |
|
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCM 846S H6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTOR
Bipolar Transistors - BJT AF TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH